NEUTRON 검사 시스템 | NEUTRON 검사시스템 (NEUTRON INPECTION SYSTEM)
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작성자 디티엑스 작성일22-02-14 13:32 조회357회 댓글0건본문
NEUTRON 검사시스템
(NEUTRON INPECTION SYSTEM)
The Neutron Imaging system offers 1680 x 1320 pixels resolution and 231 x 294 mm active area for fast crystal orientation routines. This system allows a unique digital backscattered neutron Laue diffraction pattern to be recorded as it features a centre hole to allow the neutron beam to pass through the camera system prior to reaching the sample. This configuration allows the neutron scintillator to be positioned very close to the sample, so that a large solid angle of diffracted beams can be imaged.
High sensitivity / high resolution is achieved thanks to the use of custom
scintillator and intensified cooled CCD camera read out which enables high
electro optical gain down to singe neutron sensitivity.
Extended exposures
can be used for unveiling weak diffracting patterns.
Synchronization with pulsed neutron sources down to 100ns at 50Hz repetition
rate can be achieved by feeding a TTL triggering pulse to a BNC
connector.
Remote real time acquisition is performed via a device server
driver.
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적용분야
• Neutron crystal alignment
• Back scattered neutron diffraction
• Single crystal neutron diffraction
• Neutron Laue imaging
• Neutron imaging
• Small neutron angle scattering
• Time of flight neutron diffraction
• Laue neutron diffraction
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특징
및 장점 (ADVANTAGES)
• 4 or 6 microns pore size
• Fast P43 (1ms decay at 10%) and P46
(0.2ms at 10%) phopshor screens
• Single micro channel plate (MCP) resolution above > 60 lp / mm, high modulation contrast, and up to 8,000 luminous gain
• Dual MCP stack giving photon counting sensitivity with up to 300,000 luminous gain
• Input size varies from 18 mm up to 25 mm diagonal
• Quartz, glass and or fibre optic input windows, fibre optic output windows
• Multi-alkali photocathodes with Equivalent Background Illumination (EBI) noise down to 3 10-3 counts per pixel per second are used for UV and blue response cameras
• GaAsP and GaAs photocathodes are selected for visible and red response cameras respectively, EBI noise with 6 10-2 counts per pixel per second (cooling options for reduced noise operation)
• Standard gating option : 100 ns 30 kHz repetition rate
• Ultra fast gating down to 3 ns using special conductive underlaying coatings, MHz repetition rate is achieved using dedicated pulsers/gated power supply unit with adjustable gate time / delays down to nanosecond steps
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Intensified CCD cameras |
Panoramic Intensified CCD cameras |
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· 1872 (h) x 1252 (v) CCD array |
· 7488 (h) x 2505 (v) CCD array |
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· Input pixel size : 177x 177 microns |
· Input pixel size : 177 x 177 microns |
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· LiF scintillator allowing optimized quantum efficiency with thermal neutrons |
· LiF scintillator allowing optimized quantum efficiency with thermal neutrons |
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· 3 fps at full resolution @ 20 MHz |
· 0.7 fps at full resolution 8@10 MHz |
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· Readout noise : 6-9 electrons @ 10 MHz |
· Readout noise : 6-9 electrons 8@10 MHz |
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· Full well capacity : 13,000 electrons in binning 1x1 |
· Full well capacity : 13,000 electrons |
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· Dark current : 0.01 electrons/pixel/second |
· Dark current: 0.05 electrons / pixel / frame at full resolution |
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· On chip binning up to 8x8 |
· 12-bit digitisation |
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· 12-bit digitisation |
· Extended 16-bit digitisation with up to >200,000 electrons equivalent full well capacity |
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· Extended 16-bit digitisation with up to >200,000 electrons equivalent full well capacity |
· Firewire / Camera link / GigE interface |
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· Firewire / Camera link / GigE interface |
· Synchronisation / control : via TTL pulse |
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· Synchronisation / control : via TTL pulse |
· 360° geometry |
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기술
사양 (SPECIFICATIONS)
상기 사양은 제품의 성능향상 및 개량을 위하여 변경될 수 있으며, 요청사양은 적용분야에 따라 당사 기술팀과 협의 후 추가 설치 가능하므로, 시스템에 대한 상세한 사양은 당사 영업팀과 상세하게 협의하시기 바랍니다.
