UV & VUV 검사 시스템 | EUV & Vacuum UV 검사시스템 (EUV & Vacuum UV INPECTION SYSTEM)
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작성자 디티엑스 작성일22-02-14 13:41 조회416회 댓글0건본문
EUV & Vacuum UV 검사시스템
(EUV & Vacuum UV INPECTION SYSTEM)
EUV and VUV Inspection systems provide high resolution (typically down to less than 10 microns), high dynamic range (12 to 16 bit) as well as good temporal resolution (down to microsecond range) that are necessary for modern pulsed plasma discharge EUV sources.
The system can acquire single shot or synchronized multiple shot images at up
to 13fps at full resolution from a native EUV source without suffering from
bleeding artifacts.
Flanged and/or in vacuum versions are available depending
on the flexibility required for either mask blank / resist / source / optic
characterization and inspection.
Sensitivity response can be extended from 13.5 nm up to 0,0135 nm should the system be used to sense multiple characteristic lines. Deep cooling allows very low dark current down to less than 0.005 electron/pixel/sec for extended exposure should very faint signal requires long integration periods.
적용분야 |
• EUV resin characterization
• Soft X-ray astronomy
• XUV plasma diagnostic
• EUV mirror / grating calibration
• spectroscopy
• forensics
• Pinhole imaging of Z-pinch soft X-ray source
• soft x-ray microscopy
• 2 dimensional elemental mapping
• coherent soft X-ray imaging
• EUV lithography
특징 및 장점 (ADVANTAGES) |
• Smalll pixel size less < 15microns pixel size.
• Cooled CCD sensor with 55 degree C delta T.
• 2 tap 3MHz frequency
• Sensor size from 19 and 38mm diagonal.
• Beryllium input windows.
• Very low read out noise < 30 electrons.
• High detection efficiency between 0.1 and 8
keV with near single photon counting detection
capability..
• Very low dark current with less than 1 electron
per pixel per second (cooling options for
further noise reduction).
• Simultaneous integration / read out. Enabling
100% duty cycle acquisition.
• On chip binning.
• Detector synchronisation: pixel locked for dual channel acquisition.
• Camera link and GigE digital interface.
• Low profile electronics.
• Air cooled / water cooled option.
기술 사양 (SPECIFICATIONS) |
|
Cooled megapixel XUV CCD camera |
Cooled 4 megapixel XUV CCD camera |
. 1024 (h) x 1024 (v) CCD array |
. 2048 (h) x 2048 (v) CCD array |
. Input pixel size: 13 x 13microns |
. Input pixel size: 15 x 15microns |
. 19mm diagonal |
. 43mm diagonal |
. 5 fps at full resolution @ 2x3 MHz |
. 1,5 fps at full resolution @ 2x3 MHz |
. Read out noise: 25 electrons @ 2x3 MHz, |
. Read out noise: 25 electrons @ 2x3 MHz, |
. Full well capacity: 100,000 electrons in binning1x1 |
. Full well capacity: 100,000 electrons in binning- 1x1 |
. Dark current: <1 electron / pixel / second |
. Dark current: <1 electron / pixel / second |
. 14-bit digitisation |
. 14-bit digitisation |
. Camera link / GigE nterface |
. Camera link / GigE nterface |
. Synchronisation / control: via TTL pulse or pixel clock |
. Synchronisation / control: via TTL pulse or pixel clock |
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상기 사양은 제품의 성능향상 및 개량을 위하여 변경될 수 있으며, 요청사양은 적용분야에 따라 당사 기술팀과 협의 후 추가 설치 가능하므로, 시스템에 대한 상세한 사양은 당사 영업팀과 상세하게 협의하시기 바랍니다.